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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Switching Transistor VOLTAGE 40 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. CH3906MPT CURRENT 0.2 Ampere FEATURE * Small surface mounting type. (SOT-723) * Low current (Max.=200mA). * Suitable for high packing density. * Low voltage (Max.=40V) . * High saturation current capability. * Voltage controlled small signal switch. (3) (2) SOT-723 0.17~0.27 0.4 1.15~1.25 0.4 (1) 0.75~0.85 0.27~0.37 CONSTRUCTION * PNP Switching Transistor 0.17~0.27 0.75~0.85 MARKING * 37 0.11~0.14 0.45~0.55 CIRCUIT 1 3 1.15~1.25 2 Dimensions in millimeters SOT-723 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-6 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current DC peak collector current peak base current storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector - - - - - - MIN. MAX. -40 -40 -5 -200 -200 -100 +150 150 +150 V V V UNIT mA mA mA C C C -65 - -65 RATING CHARACTERISTIC CURVES ( CH3906MPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 500 UNIT K/W CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = - 30 V IC = 0; VEB = 6 V VCE = -1V; note 1 IC = -0.1mA IC = -1mA IC = -10 mA IC = - 50 mA IC = -100 mA VCEsat VBEsat Cc Ce fT F collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise gure IC = -10 mA; IB = - 1 mA IC = -50 mA; IB = - 5 mA IC = -10 mA; IB = -1mA IC = -50 mA; IB = - 5 mA IE = ie = 0; VCB = - 5 V ; f = 1 MHz IC = ic = 0; VEB = -500 mV; f = 1 MHz IC = 10 mA; VCE = - 2 0 V ; f = 100 MHz 60 80 100 60 30 - - -650 - - - 250 - - 300 - - -250 -400 -850 -950 4.5 10 - 4 mV mV mV mV pF pF MHz dB - - MIN. MAX. -50 -50 UNIT nA nA IC = 100 A; VCE = - 5 V; RS = 1 k ; - f = 10 Hz to 15.7 kHz - - - - - - Switching times (between 10% and 90% levels); ton td tr toff ts tf Note 1. Pulse test: tp 300 s; 0.02. turn-on time delay time rise time turn-off time storage time fall time ICon = -10 mA; IBon = -1 mA; IBoff = 1 mA 65 35 35 300 225 75 ns ns ns ns ns ns RATING CHARACTERISTIC CURVES ( CH3906MPT ) Permissible Pulse Load Ptotmax/PtotDC = f ( tp) 10 3 Ptot max 5 Ptot DC D= tp T tp T DC current gain hFE = f ( IC) VCE = 1 V, normalized 10 1 h FE 5 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 125 C 10 0 25 C 5 -55 C 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 -1 -1 10 5 10 0 5 10 1 mA 10 2 IC Saturation voltage IC = f (VBEsat; VCEsat) hFE = 10 Short-circuit forward current transfer ratio h21e = f (IC) VCE = 10V, f = 1MHz 10 3 2 mA C 10 2 5 V CE V BE h 21e 5 10 2 10 5 1 5 10 0 0 0.2 0.4 0.6 0.8 1.0 V 1.2 V BE sat , V CE sat 10 1 -1 10 5 10 0 mA 5 10 1 IC RATING CHARACTERISTIC CURVES ( CH3906MPT ) Open-circuit output admittance h22e = f (IC ) VCE = 10V, f = 1MHz 10 2 s h 22e 5 t r ,t d 10 2 Delay time td = f (IC ) Rise time tr = f (IC ) 10 3 ns tr td h FE = 10 VCC = 3 V 15 V 40 V 10 1 5 10 1 V BE = 2 V 0V 10 0 -1 10 5 10 0 mA 5 10 1 10 0 0 10 5 10 1 5 10 2 mA 5 10 3 C C Fall time tf = f (IC) Input impedance h11e = f (IC ) VCE = 10 V, f = 1kHz 10 3 ns tf VCC = 40 V 10 2 h FE = 20 25 C 125 C 10 2 h 11e k 10 1 5 10 1 h FE = 10 10 0 5 10 0 0 10 5 10 1 5 10 2 mA 5 10 3 10 -1 -1 10 5 10 0 mA 10 1 C C RATING CHARACTERISTIC CURVES ( CH3906MPT ) Open-circuit reverse voltage transfer ratio h12e = f (IC) VCE = 10V, f = 1kHz 10 -3 h 12e 5 10 -4 5 10 -5 10 -1 5 10 0 mA C 10 1 RATING CHARACTERISTIC CURVES ( CH3906MPT ) Test circuit Delay and rise time -3.0 V 275 <1.0 ns +0.5 V 10 k 0 -10.6 V D = 2% C <4.0 pF 300 ns Storage and fall time -3.0 V <1.0 ns +9.1 V 10 k 0 -10.9 V 10 < t 1< 500 s D = 2% 1N916 275 C <4.0 pF t1 |
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